Micron Technology · DRAM
MT53E128M32D2DS-053 AAT:A
IC DRAM 4GBIT 1.866GHZ 200WFBGA
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MT53E128M32D2DS-053 AAT:A specifications
Recorded source facts. Missing values are kept explicit; verify the exact manufacturer document before design approval.
| Manufacturer | Micron Technology |
|---|---|
| Ordering code | MT53E128M32D2DS-053 AAT:A |
| Family | DRAM |
| Package | 200-WFBGA |
| Product Status | Active |
| DigiKey Programmable | Not Verified |
| Memory Type | Volatile |
| Memory Format | DRAM |
| Technology | SDRAM - Mobile LPDDR4 |
| Memory Size | 4Gbit |
| Memory Organization | 128M x 32 |
| Memory Interface | Not provided in source |
| Clock Frequency | 1.866 GHz |
| Write Cycle Time - Word, Page | Not provided in source |
| Access Time | Not provided in source |
| Voltage - Supply | 1.1V |
| Operating Temperature | -40°C ~ 105°C (TC) |
| Mounting Type | Surface Mount |
| Package / Case | 200-WFBGA |
| Supplier Device Package | 200-WFBGA (10x14.5) |
Documents and evidence
MT53E128M32D2DS-053 AAT:A ↗Before sourcing MT53E128M32D2DS-053 AAT:A
- Separate working memory and storage
- Check organization and controller baseline
- Review timing, voltage and package
- Retain the complete ordering code
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